WeEn Semiconductors WSJM65R099DQ Power MOSFET, N Channel, 650 V, 32 A, 99 Milliohms, TO-220, 3 Pins, Through Hole

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 240 W

Transistor Mounting: Through Hole

RDS(ON) Test Voltage: 10 V

Transistor Case Style: TO-220

Drain Source Voltage Vds: 650 V

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 32 A

Drain Source On State Resistance: 99 mOhm

Gate Source Threshold Voltage Max: 5 V

Datasheet