WeEn Semiconductors PHE13005X/01,127 BJTs - Bipolar Transistors Silicon diffused pwr transistor
ModelPHE13005X/01,127
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Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 26 W
DC Current Gain hFE Max: 40
Collector- Base Voltage VCBO: 700 V
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 10
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 300 mV
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