WeEn Semiconductors PHD13005,127 BJTs - Bipolar Transistors TRANSISTOR NPN BIPO 700V
ModelPHD13005,127
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 1.800 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 75 W
DC Current Gain hFE Max: 40
Collector- Base Voltage VCBO: 700 V
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 10
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 300 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts