WeEn Semiconductors BUJ105AB,118 BJTs - Bipolar Transistors Trans GP BJT NPN 400V 8A 3-Pin(2+Tab)

Width: 9.4 mm

Height: 4.5 mm

Length: 10.3 mm

Technology: Si

Unit Weight: 2.402 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 125 W

DC Current Gain hFE Max: 36

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 300 mV