Vishay SIS4604DN-T1-GE3 MOSFETs POWRPK N CHAN 60V

Width: 3.3 mm

Length: 3.3 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Qg - Gate Charge: 11.2 nC

Pd - Power Dissipation: 3.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 14.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.4 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V