Vishay SIS436DN-T1-GE3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSIS436DN-T1-GE3
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Vgs(th): 2.3 V
Vgs (Max): 20V
Gate Charge (Qg): 22nC
Power consumption: 3.5|27.7W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 25V
Continuous drain current: 16A
Input Capacitance (Ciss): 855pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 10.5mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
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