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Vishay SIHD5N80AE-GE3 Power MOSFET, N Channel, 800 V, 4.4 A, 1.17 ohm, TO-252 (DPAK), Surface Mount

ModelSIHD5N80AE-GE3
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Channel Type: N Channel

Product Range: E Series

Power Dissipation: 62.5

Transistor Mounting: Surface Mount

Transistor Case Style: TO-252 (DPAK)

Drain Source Voltage Vds: 800

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 4.4

Drain Source On State Resistance: 1.35

Gate Source Threshold Voltage Max: 4

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