Vishay SIDR610EP-T1-RE3 MOSFETs SOT669 200V 39.6A N-CH MOSFET

Width: 5.15 mm

Length: 6.15 mm

Fall Time: 48 ns

Rise Time: 54 ns

Technology: Si

Qg - Gate Charge: 20 nC

Pd - Power Dissipation: 7.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 8.9 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 334 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V