Vishay SIA850DJ-T1-GE3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSIA850DJ-T1-GE3
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Vgs(th): 1.4 V
Vgs (Max): 16V
Gate Charge (Qg): 4.5nC
Power consumption: 1.9|7W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 190V
Continuous drain current: 950mA
Input Capacitance (Ciss): 90pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 3.8Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
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