Vishay SIA411DJ-T1-GE3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSIA411DJ-T1-GE3
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Vgs(th): 1 V
Vgs (Max): 8V
Gate Charge (Qg): 38nC
Power consumption: 3.5|19W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 12A
Input Capacitance (Ciss): 1200pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 30mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V
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