Vishay SI8445DB-T2-E1 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSI8445DB-T2-E1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Vgs(th): 0.85V
Vgs (Max): 5V
Gate Charge (Qg): 16nC
Power consumption: 1.8|11.4W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 9.8A
Input Capacitance (Ciss): 700pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 84mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts