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Vishay SI6467BDQ-T1-E3 MOSFET

ModelSI6467BDQ-T1-E3
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Vgs(th): 0.85V

Gate Charge (Qg): 70nC

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 6.8A

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 12.5mOhm

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