Vishay SI4670DY-T1-GE3 Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 2.8W

Operating temperature: -55 to 150C

Drain to Source voltage: 25V

Continuous drain current: 8A

Current - Drain (Id) (25°C): 8A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 18nC@10V

Drain to Source on-state resistance: 23mOhm

On Voltage - (Vgs when Id is applied): 2.2V@250uA

On Resistance - (Rds when Id,Vgs is applied): 23mOhm@7A|10V

Input Capacitance - (Ciss when Vds is applied): 680pF@13V

Datasheet