Vishay SI4500BDY-T1-GE3 Trans MOSFET N/P-CH 20V 6.6A/3.8A 8-Pin SOIC N T/R

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 1.3W

Drain to Source voltage: 20V

Continuous drain current: 6.6A/3.8A

Current - Drain (Id) (25°C): 6.6|3.8A

Field-effect transistor type: N and P-Channel|Common Rain

Gate Charge - (when applying Vgs): 17nC@4.5V

Drain to Source on-state resistance: 20mOhm/60mOhm

On Voltage - (Vgs when Id is applied): 1.5V@250uA

On Resistance - (Rds when Id,Vgs is applied): 20mOhm@9.1A|4.5V

Datasheet