Vishay SI4155DY-T1-GE3 MOSFETs SO8 P CHAN 30V

Fall Time: 14 ns

Rise Time: 18 ns

Technology: Si

Qg - Gate Charge: 13.6 nC

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 10.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V