Vishay SI3460DV-T1-E3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSI3460DV-T1-E3
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Vgs(th): 0.45V
Vgs (Max): 8V
Gate Charge (Qg): 20nC
Power consumption: 1.1W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 5.1A
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 27mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
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