Vishay SI1913EDH-T1-E3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSI1913EDH-T1-E3
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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 570mW
Operating temperature: -55 to 150C
Drain to Source voltage: 20V
Continuous drain current: 880mA
Current - Drain (Id) (25°C): 880mA
Field-effect transistor type: 2P-Channel(Dual)
Gate Charge - (when applying Vgs): 1.8nC@4.5V
On Voltage - (Vgs when Id is applied): 450mV@100uA
On Resistance - (Rds when Id,Vgs is applied): 490mOhm@880mA|4.5V
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