Vishay SI1070X-T1-GE3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSI1070X-T1-GE3
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Vgs(th): 1.55 V
Vgs (Max): 12V
Gate Charge (Qg): 8.3nC
Power consumption: 236mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Input Capacitance (Ciss): 385pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 99mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
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