Vishay SI1056X-T1-GE3 MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSI1056X-T1-GE3
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Vgs(th): 0.95V
Vgs (Max): 8V
Gate Charge (Qg): 8.7nC
Power consumption: 236mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Input Capacitance (Ciss): 400pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 89mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
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