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Vishay IRFD213 MOSFET

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Vgs(th): 4 V

Gate Charge (Qg): 8.2nC

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 250V

Continuous drain current: 450mA

Input Capacitance (Ciss): 140pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2Ohm

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