TT Electronics / Optek Technology 2N2222AUB BJTs - Bipolar Transistors NPN G.P. TRANSISTOR

Width: 2.67 mm

Height: 1.37 mm

Length: 3.18 mm

Technology: Si

Unit Weight: 6.724 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 325

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1 V