Transphorm TP65H300G4LSGB GaN FETs Gan FET 650 V 6.5 A PQFN88

Fall Time: 4.8 ns

Rise Time: 4.6 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Cascode

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Qg - Gate Charge: 8.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 21 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 27.4 ns

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 312 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V