Toshiba TTD1409B,S4X BJTs - Bipolar Transistors Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=25W F=1MHZ

Unit Weight: 1.700 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 600 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 2 V