Toshiba TTC012(Q) BJTs - Bipolar Transistors NPN PWR Amp Trans 2A IC 3A ICP 800V
ManufacturerToshiba(View more products from this manufacturer)
ModelTTC012(Q)
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Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.1 W
DC Current Gain hFE Max: 250 at 1 mA, 5 V
Emitter- Base Voltage VEBO: 8 V
Collector- Base Voltage VCBO: 800 V
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 80 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 375 V
Collector-Emitter Saturation Voltage: 500 mV
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