Toshiba TRS4E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A TO-220-2L
ManufacturerToshiba(View more products from this manufacturer)
ModelTRS4E65H,S1Q
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Technology: SiC
Mounting Style: Through Hole
If - Forward Current: 4 A
Ir - Reverse Current: 2 uA
Vf - Forward Voltage: 1.2 V
Pd - Power Dissipation: 60 W
Ifsm - Forward Surge Current: 230 A
Vrrm - Repetitive Reverse Voltage: 650 V
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