Toshiba TRS4A65F,S1Q Schottky Silicon Carbide Diodes DIODE
ManufacturerToshiba(View more products from this manufacturer)
ModelTRS4A65F,S1Q
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Technology: SiC
Unit Weight: 1.830 g
Configuration: Single
Mounting Style: Through Hole
If - Forward Current: 4 A
Ir - Reverse Current: 200 nA
Vf - Forward Voltage: 1.45 V
Vr - Reverse Voltage: 650 V
Ifsm - Forward Surge Current: 37 A
Maximum Operating Temperature: + 175 C
Vrrm - Repetitive Reverse Voltage: 650 V
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