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Toshiba TRS40H120H,S1Q SiC Schottky Diodes 1200 V/40 A SiC Schottky Barrier Diode, TO-247-2L

ModelTRS40H120H,S1Q
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Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 102 A

Ir - Reverse Current: 3.6 uA

Vf - Forward Voltage: 1.27 V

Pd - Power Dissipation: 454 W

Ifsm - Forward Surge Current: 1.91 kA

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV

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