Toshiba TPWR8004PL,L1Q MOSFETs N-CH Mosfet 40V 150A 8DSOP

Width: 5 mm

Height: 0.73 mm

Length: 5 mm

Fall Time: 14 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 104 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 103 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 170 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 150 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 800 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V