Toshiba TK65S04N1L,LXHQ MOSFETs 107W 1MHz Automotive; AEC-Q101

Fall Time: 17 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 39 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 107 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 51 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 4.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V