Toshiba TK5R1P08QM,RQ MOSFETs UMOS10 DPAK 80V 5.1mohm

Fall Time: 68 ns

Rise Time: 64 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 83 ns

Typical Turn-Off Delay Time: 119 ns

Id - Continuous Drain Current: 84 A

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 5.1 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V