Toshiba TK46E08N1,S1X MOSFETs 80V N-Ch PWR FET 80A 103W 37nC
ManufacturerToshiba(View more products from this manufacturer)
ModelTK46E08N1,S1X
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Width: 4.45 mm
Height: 15.1 mm
Length: 10.16 mm
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 37 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 103 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 8.4 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
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