Toshiba TJ60S06M3L(T6L1,NQ MOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 250 ns

Rise Time: 100 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 156 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 10 V

Typical Turn-On Delay Time: 127 ns

Typical Turn-Off Delay Time: 970 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11.2 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V