Toshiba TBC857B,LM BJTs - Bipolar Transistors BJT PNP -0.15A -50V
ManufacturerToshiba(View more products from this manufacturer)
ModelTBC857B,LM
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Technology: Si
Unit Weight: 30 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 320 mW
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 220 mV
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