Toshiba SSM6N36FE,LM MOSFETs 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V

Width: 1.2 mm

Height: 0.55 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 36 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.23 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 630 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 350 mV