Toshiba SSM6L35FU(TE85L,F) MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 200 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 115 ns, 175 ns

Typical Turn-Off Delay Time: 300 ns, 251 ns

Id - Continuous Drain Current: 180 mA, 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V