Toshiba SSM3K56MFV,L3F MOSFETs Small-signal FET 0.8A 20V 0.84ohm

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Unit Weight: 1.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5.5 ns

Typical Turn-Off Delay Time: 8.5 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 186 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV