Toshiba SSM3K16FU,LF MOSFETs Small-signal MOSFET High Speed Switching

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 70 ns

Typical Turn-Off Delay Time: 125 ns

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.5 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV