Toshiba SSM3J65CTC,L3F MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:+/-10V Id:-0.7A

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 130 ns

Typical Turn-Off Delay Time: 1075 ns

Id - Continuous Drain Current: 700 mA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 2.2 S

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V