Toshiba SSM3J378R,LF MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-6A

Technology: Si

Unit Weight: 11 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 12.8 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 8 V, + 6 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 107 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 4.5 S

Rds On - Drain-Source Resistance: 29.8 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V