Toshiba RN2405,LF Pre-Biased Bipolar Transistor
ManufacturerToshiba(View more products from this manufacturer)
ModelRN2405,LF
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Mounting Type: Surface Mount
Power-Maximum: 200mW
Transistor type: PNP-Prebias
Collector current: -100mA
Frequency-Transition: 200MHz
Resistance-Base (R1): 2.2kOhms
Vce Saturation (maximum): 300mV@250uA,5mA
Collector-emitter voltage: -50V
Resistance-Emitter base (R2): 47kOhms
DC current gain (hFE) (minimum): 80@10mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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