Toshiba RN2313,LF Digital Transistors BRT -0.1A -50V
ManufacturerToshiba(View more products from this manufacturer)
ModelRN2313,LF
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Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 100 mW
Typical Input Resistor: 47 kOhms
Peak DC Collector Current: 100 mA
Emitter- Base Voltage VEBO: 5 V
Maximum Operating Frequency: 200 MHz
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
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