Toshiba RN2130MFV,L3F Digital Transistors Bias Resistor Built-in Transistor
ManufacturerToshiba(View more products from this manufacturer)
ModelRN2130MFV,L3F
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Unit Weight: 1.500 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: PNP
Pd - Power Dissipation: 150 mW
Typical Input Resistor: 100 kOhms
Typical Resistor Ratio: 1
Emitter- Base Voltage VEBO: - 10 V
Continuous Collector Current: - 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: - 50 V
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