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Toshiba RN2108MFV,L3F Digital Transistors Bias Resistor Built-in Transistor

ModelRN2108MFV,L3F
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Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 22 kOhms, 47 kOhms

Typical Resistor Ratio: 0.468

Emitter- Base Voltage VEBO: - 7 V

Continuous Collector Current: - 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: - 50 V

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