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Toshiba RN1104MFV,L3F Digital Transistors 150mW TRANSISTOR

ModelRN1104MFV,L3F
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Unit Weight: 1.500 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 47 kOhms

Typical Resistor Ratio: 0.8

Emitter- Base Voltage VEBO: 10 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 50 V

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