Toshiba HN4B102J(TE85L,F) BJTs - Bipolar Transistors Pb-F POWER TRANSISTOR SMV V=30V F=1MHZ
ManufacturerToshiba(View more products from this manufacturer)
ModelHN4B102J(TE85L,F)
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Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 1.1 W
DC Current Gain hFE Max: 500
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V, 30 V
Continuous Collector Current: - 1.8 A, 2 A
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 30 V
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