Toshiba HN4B01JE(TE85L,F) BJTs - Bipolar Transistors Vceo=-50V Vceo=50V
ManufacturerToshiba(View more products from this manufacturer)
ModelHN4B01JE(TE85L,F)
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Technology: Si
Configuration: Dual
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 100 mW
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
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