Toshiba HN1A01FE-GR,LF BJTs - Bipolar Transistors Bias Resistor Built-in transistor
ManufacturerToshiba(View more products from this manufacturer)
ModelHN1A01FE-GR,LF
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Technology: Si
Unit Weight: 3 mg
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 150 mA
Maximum DC Collector Current: 150 mA
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 300 mV
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