Toshiba 2SC3326-A,LF BJTs - Bipolar Transistors Transistor for Low Freq. Amplification
ManufacturerToshiba(View more products from this manufacturer)
Model2SC3326-A,LF
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 1200
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 25 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 42 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts