Toshiba 2SA2154CT-GR,L3F BJTs - Bipolar Transistors Transistor for Low Freq. Amplification
ManufacturerToshiba(View more products from this manufacturer)
Model2SA2154CT-GR,L3F
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Width: 0.6 mm
Height: 0.38 mm
Length: 1 mm
Technology: Si
Unit Weight: 0.750 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 180 mV
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