Toshiba 2SA2097(TE16L1,NQ) BJTs - Bipolar Transistors Pb-F POWER TRANSISTOR; PW-MOLD; PC=1W; F=100KHZ
ManufacturerToshiba(View more products from this manufacturer)
Model2SA2097(TE16L1,NQ)
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Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 500
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 5 A
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 270 mV
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